Which is true about atomic layer deposition process?

The fundamental notion behind Atomic Layer Deposition is rather simple: It is a process by which an atomic layer of material can be affixed to a surface material one layer at a time. This reaction only allows one atom at a time to bind to the surface material.

When was atomic layer deposition invented?

1974
Atomic layer deposition (ALD) has become a very popular method for the preparation of (ultra)thin films over the last two decades, yet it has a rich history which goes back many more years. It is well known that the first patent on ALD was applied for in 1974 [1].

Which is a feature of atomic layer deposition?

Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition.

Who was the inventor of atomic layer deposition?

Atomic layer deposition (ALD) is a thin film deposition technique based on sequential vapor-surface reactions, which was invented independently by different researchers in the Soviet Union and in Finland. V.B. Aleskovskii first suggested the concept of the ALD process in his Ph.D. thesis published in 1952.

How does atomic layer deposition ( ALD ) work?

Atomic Layer Deposition (ALD) techniques can produce continuous, Angstrom-level-controlled, and defect-free films. ALD, a variation on CVD, is a gas-phase method based on two sequential, self-limiting surface reactions. Each surface reaction allows only one monolayer of deposition.

What was the Soviet name for atomic layer deposition?

The Soviet Union researchers used the term molecular layering (ML), while Suntola called the technology atomic layer epitaxy (ALE). Recently the name ALD has been commonly adopted as it describes the technology more accurately.