What is the wavelength of EUV lithography?

What is the wavelength of EUV lithography?

Wavelengths in the range 11–14 nm are in the extreme ultraviolet (EUV) or soft x-ray portion of the electromagnetic spectrum, so lithography using such wavelengths is referred to as EUV lithography.

Why EUV is so difficult?

Today, EUV can print tiny features on a wafer, but the big problem is the power source—it doesn’t generate enough power to enable an EUV scanner go fast enough or make it economically feasible. In fact, there have been several delays with the source, causing EUV to get pushed out from one node to the next.

What is the wavelength of EUV?

13.5 nm
What is EUV lithopgraphy? EUV (Extreme Ultraviolet) lithography uses an EUV light of the extremely short wavelength of 13.5 nm. It allows exposure of fine circuit patterns with a half-pitch below 20 nm that cannot be exposed by the conventional optical lithography using an ArF excimer laser.

What is ASML EUV?

EUV lithography, a technology entirely unique to ASML, uses light with a wavelength of 13.5 nanometers. This wavelength is more than 14 times shorter than DUV light. EUV light occurs naturally in outer space. But to make EUV lithography possible, we needed to engineer a way to create such light within a system.

Is there a comprehensive review of 193nm immersion lithography?

This article is a comprehensive review of 193nm immersion lithography. It will be focused on the materials and processes rather than the optical system of the tool. Some of the results are from the author’s previous publications. This is the first of five parts; each part is relatively self-complete.

How many defects can be added to a 193i wafer?

With an un-optimized 193i process, typically 4-20% more defects may be added to a wafer than that of “dry” 193nm lithography. The limitations on the process yield caused by immersion defects must be solved before bringing 193i lithography into high-volume production.

What kind of lens does a 193 nm scanner use?

Geared for the production of chips at 0.10-micron and below, the 193-nm Canon FPA-5000AS3 scanner features a low-aberration 4:1 reduction projection lens, with a high numerical-aperture (NA) of 0.75. The 193-nm tool incorporates high-purity, calcium-fluoride (CaF2) lens technology within its projection optics system.

What are the power requirements for EUV lithography?

The power target for EUV lithography is at least 250 W, while for other conventional lithography sources, it is much less. For example, immersion lithography light sources target 90 W, dry ArF sources 45 W, and KrF sources 40 W. High-NA EUV sources are expected to require at least 500 W.